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Proceedings Paper

Recent Developments of Metal Ohmic Contacts to InP-Based Materials Formed by Rapid Thermal Processing
Author(s): A. Katz; S. N. G. Chu; W. C. Dautremont-Smith; M. Soler; B. Weir; P. M. Thomas
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Paper Abstract

The potential advantages of the rapid thermal processing (RTP) technique, in particular its accurate isothermal temperature and time control, motivated its use for alloying and sintering ohmic contacts to InP-based materials. Contact properties, such as stresses, were evaluated and compared to those of the same contacts fabricated by conventional heating cycles. The study included few different metal schemes, such as, Au-based alloys and several non-alloyed refractory systems as Ptai and W, which were deposited as ohmic contacts onto a variety of InP-based materials (InP, InGaAs, InGaAsP). The results revealed significant superiority of the non-alloyed contacts performance, both in the microstructure and electrical properties, demonstrating the potential of RTP as the standard heat treatment for ohmic contact fabrication to InP-based devices.

Paper Details

Date Published: 6 April 1990
PDF: 18 pages
Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963966
Show Author Affiliations
A. Katz, AT&T Bell Laboratories (United States)
S. N. G. Chu, AT&T Bell Laboratories (United States)
W. C. Dautremont-Smith, AT&T Bell Laboratories (United States)
M. Soler, AT&T Bell Laboratories (United States)
B. Weir, AT&T Bell Laboratories (United States)
P. M. Thomas, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 1189:
Rapid Isothermal Processing
Rajendra Singh, Editor(s)

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