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Proceedings Paper

The Application of Rapid Thermal Chemical Vapor Deposition of Doped-Thin Single Crystal Silicon for MOS and Bipolar Technologies.
Author(s): Ahmad Kermani; Y. H. Ku; F. Wong; K. B. Kim; P. Maillot; A. E. Morgan; S. Hahn
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Paper Abstract

Rapid thermal chemical vapor deposition (RTCVD) of in-situ doped N and P-type thin single crystal silicon layers has been accomplished in a cold wall environment. Dichlorosilane, SiH2C12, is used for the silicon source, B2H6 and AsH3 for the dopant sources. Special attention is paid to minimize the oxygen and carbon contamination of the silicon surface prior to the deposition. As a result of process optimization, the total thermal budget of the RTCVD is reduced, junction abruptness is enhanced, dopant movement is minimized and the process-induced defects in the grown layer are remarkably reduced. The layers of single crystal silicon are examined by Fourier-transform infrared spectroscopy (FTIR), for thickness measurement and uniformity, modified Schimmel etch and Nomarski interference microscopy for defect delineation , secondary ion mass spectrometry (SIMS) and spreading resistance profile (SRP) for dopant profiling and junction depth measurements. Under optimized process conditions, single crystal silicon layers of high degree of structure quality with transition widths of 0.1 to 0.16 micron for three orders of magnitude change in dopant concentration are deposited. A systematic approach to optimize the process conditions for deposition of high quality and well-controlled single crystal silicon films is presented. It is demonstrated that the pre-growth process step(s) has a profound effect on the crystal quality of the grown layers. The process control features of RTCVD technology are addressed and the applications of thin, controllably-doped single crystal silicon layers for MOS and bipolar technologies are discussed.

Paper Details

Date Published: 6 April 1990
PDF: 21 pages
Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963965
Show Author Affiliations
Ahmad Kermani, RAPRO Technology Inc.. (United States)
Y. H. Ku, RAPRO Technology Inc. (United States)
F. Wong, RAPRO Technology Inc. (United States)
K. B. Kim, Philips Research Laboratories Sunnyvale (United States)
P. Maillot, Philips Research Laboratories Sunnyvale (United States)
A. E. Morgan, Philips Research Laboratories Sunnyvale (United States)
S. Hahn, Siltec Corp. (United States)

Published in SPIE Proceedings Vol. 1189:
Rapid Isothermal Processing
Rajendra Singh, Editor(s)

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