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Proceedings Paper

A New Method For Evaluating Temperature Distribution By Using Si + + B + Implantation
Author(s): Shigeo Onishi; Kenichi Tanaka; Keizo Sakiyama
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Paper Abstract

A method for evaluating temperature distributions between 400 °C and 600 °C have been studied by utilizing Si+ + B+ implantation. From the measurement of the sheet resistance(ps ), the equations shown in ps =3.8x10-8( t )-0.6 exp(Ea / kT) (Furnace anneal), Ps = 9.0x10-9( t )-0.5 exp( Ea / kT) (RTA) are obtained. And an obtained activation energy ( Ea) of 1.9eV is equivalent to that of solid phase epitaxial regrowth. From the distribution of the sheet resistance, the estimation of the temperature distribution between 400°C and 600 °C becomes possible for annealing times from lsec. to lhour.

Paper Details

Date Published: 6 April 1990
PDF: 6 pages
Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963961
Show Author Affiliations
Shigeo Onishi, Sharp Corp. (Japan)
Kenichi Tanaka, Sharp Corp. (Japan)
Keizo Sakiyama, Sharp Corp. (Japan)

Published in SPIE Proceedings Vol. 1189:
Rapid Isothermal Processing
Rajendra Singh, Editor(s)

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