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Proceedings Paper

Effects Of HCl Gas And Hydrogen Mixture Etching On In Situ Cleaning Of GaAs Substrates In Molecular Beam Epitaxy
Author(s): Junji Saito; Kazuo Kondo
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Paper Abstract

We have investigated in situ cleaning of GaAs substrates with a HCl gas and hydrogen mixture prior to molecular beam epitaxy in a multichamber system. The chemical reaction during etching was monitored in situ and simultaneously using a quadrupole mass spectrometer. After etching, the reflection high energy electron diffraction patterns with reconstructed structures, such as (2x4) As-stabilized surface and (4x2) Ga-stabilized surface, were observed in the gas etched substrate surface. These structures suggest that the gas etched substrate surface is atomically flat, resembling an epitaxial layer surface. To study the effect of gas etching, the carrier depletion layer and the residual carbon impurity around the substrate epitaxial interface were measured by capacitance-voltage carrier profiling and secondary ion mass spectroscopy. After gas etching, the carrier depletion was greatly reduced, from 1.2 x 1012 to 1 x 101° cm-2. The carbon impurity around the interface also decreased by one order of magnitude. We then applied this etching technique to in situ cleaning of semi-insulating GaAs substrates prior to the growth of selectively doped GaAs/N-AlGaAs heterostructures having very thin GaAs buffer layers.

Paper Details

Date Published: 15 February 1990
PDF: 10 pages
Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); doi: 10.1117/12.963945
Show Author Affiliations
Junji Saito, Fujitsu Limited (Japan)
Kazuo Kondo, Fujitsu Limited (Japan)

Published in SPIE Proceedings Vol. 1188:
Multichamber and In-Situ Processing of Electronic Materials
Robert S. Freund, Editor(s)

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