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Proceedings Paper

Investigation of Copper / Polyimide Interfacial Reactions
Author(s): Rao M. Nagaraj an; Victor A. Wells
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Paper Abstract

Currently, there is increased interest in the polyimide / copper interface. This arises from the use of polyimide as a dielectric media between copper interconnect layers in multichip modules. In this paper we report on studies of the processes/reactions occurring at the polyimide-copper interface using Auger depth profiling and FTIR spectroscopy. The samples were prepared by spin coating polyimide onto the deposited sputtered copper metal. Following this coating, the polyimide film was heat treated to promote imidization for curing. Examination of the interface showed considerable intermixing of copper ions in the polyimide layer, as revealed by Auger depth profiling and FTIR. This penetration prevents the polyimide films from complete curing during the heating process therefore limiting the long term reliability and causing failure of the interconnect. A possible failure mechanism involving copper carboxylate in polyimide film is proposed. Experimental results will be presented in details.

Paper Details

Date Published: 5 February 1990
PDF: 10 pages
Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); doi: 10.1117/12.963929
Show Author Affiliations
Rao M. Nagaraj an, Unisys Corporation (United States)
Victor A. Wells, Unisys Corporation (United States)

Published in SPIE Proceedings Vol. 1186:
Surface and Interface Analysis of Microelectronic Materials Processing and Growth
Leonard J. Brillson; Fred H. Pollak, Editor(s)

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