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Proceedings Paper

Process Development And Control Using Total Reflection X-Ray Fluorescence (TXRF) For Surface Analysis
Author(s): R. S. Hockett
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Paper Abstract

A new x-ray analytical technique, Total reflection X-Ray Fluorescence (TXRF) analysis, is now available for process development and control of heavy metal surface impurities in microelectronic integrated processing. The detection limits are on the order of 1011 atoms/cm2, several orders of magnitude better than Auger electron spectroscopy and electron spectroscopy for chemical analysis. The measurements are also quantitative in the top 3-4 nm of the surface, unlike secondary ion mass spectrometry. TXRF data are presented to support the quantification method, to show the stability of the measurement procedure, and to demonstrate application to process development of dry etching, ion implantation, and rapid thermal annealing, and process control of substrate cleaning. In addition, the TXRF signal change with incident angle is used to distinguish plated contamination from residue or particulate contamination.

Paper Details

Date Published: 5 February 1990
PDF: 12 pages
Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); doi: 10.1117/12.963912
Show Author Affiliations
R. S. Hockett, Charles Evans & Associates (United States)

Published in SPIE Proceedings Vol. 1186:
Surface and Interface Analysis of Microelectronic Materials Processing and Growth
Leonard J. Brillson; Fred H. Pollak, Editor(s)

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