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Proceedings Paper

In situ Characterization Of MBE Grown Surfaces And Interfaces By Grazing Incidence X-Ray Diffraction
Author(s): R. Pinchaux; M. Sauvage-Simkin; J. Massies; N. Jedrecy; N. Greiser; V. H. Etgens
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Paper Abstract

The application of in-situ grazing incidence X-ray diffraction to the determination of the atomic structure of surfaces and to the quantitative evaluation of mifit strains in the very first stages of heteroepitaxy is illustrated by the particular example of the molecular beam epitaxial (MBE) growth of GaAs on Si. Such experiments have been made possible by the coupling of MBE chambers with ultra-high vacuum compatible X-ray diffractometers and the advent of powerful synchrotron radiation X-ray sources.

Paper Details

Date Published: 5 February 1990
PDF: 8 pages
Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); doi: 10.1117/12.963911
Show Author Affiliations
R. Pinchaux, Universite P. et M. Curie (France)
M. Sauvage-Simkin, Laboratoire de Mineralogie-Cristallographie (France)
J. Massies, LPEs (France)
N. Jedrecy, Laboratoire de Mineralogie-Cristallographie (France)
N. Greiser, CNRS-MEN-CEA (France)
V. H. Etgens, CNRS-MEN-CEA (France)

Published in SPIE Proceedings Vol. 1186:
Surface and Interface Analysis of Microelectronic Materials Processing and Growth
Leonard J. Brillson; Fred H. Pollak, Editor(s)

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