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Proceedings Paper

Ablation-Technique and Image Reversal in Ion-Exposed Resists by Excimer-Laser-Radiation
Author(s): Guenther Stangl; Ewald Cekan; Wolfgang Fallmann
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Paper Abstract

A Lamda Physics EMG 102E excimer laser operating at wave-lengths of 248nm (KrF) and 193nm (ArF) was employed either to transfer structures by 1 : 1 shadow printing from a micromask onto a resist coated wafer using ablation technique or to develop ion exposed resists by blanket exposure at the ArF line.

Paper Details

Date Published: 12 April 1990
PDF: 5 pages
Proc. SPIE 1183, Holography '89, (12 April 1990); doi: 10.1117/12.963808
Show Author Affiliations
Guenther Stangl, Technische Universitsat Wien (Austria)
Ewald Cekan, Technische Universitsat Wien (Austria)
Wolfgang Fallmann, Technische Universitsat Wien (Austria)

Published in SPIE Proceedings Vol. 1183:
Holography '89
Yuri N. Denisyuk; Tung H. Jeong, Editor(s)

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