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Proceedings Paper

Mask Specs And Equipment Specs - Disparity And Reconciliation
Author(s): Paul A. Warkentin; James A. Schoeffel; Ric Diola; Gianpaolo Spadini
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Paper Abstract

The typical pattern quality specifications for large lithography equipment (such as raster scan e-beam systems) and the industry standard pattern quality specifications for masks and reticles have grown to be quite different. The equipment manufacturers speak one language, the mask users speak another, and the mask maker must understand both. However, the relationship between these two sets of specifications is not obvious or typically available to the mask maker when purchasing such equipment, making it difficult to anticipate the mask and reticle quality it will deliver. The specific definitions and measurement procedures behind the Position Accuracy, Overlay Accuracy, Orthogonality, Scan Linearity and Linewidth Uniformity specifications for electron beam systems are examined in detail and their relationship to the Composite Overlay Errors and Composite Critical Dimension Variations found on masks and reticles is explored.

Paper Details

Date Published: 20 August 1986
PDF: 6 pages
Proc. SPIE 0633, Optical Microlithography V, (20 August 1986); doi: 10.1117/12.963714
Show Author Affiliations
Paul A. Warkentin, ATEQ Corporation (United States)
James A. Schoeffel, ATEQ Corporation (United States)
Ric Diola, Diamon Images (United States)
Gianpaolo Spadini, VLSI Technology, Inc. (United States)

Published in SPIE Proceedings Vol. 0633:
Optical Microlithography V
Harry L. Stover, Editor(s)

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