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Proceedings Paper

Sub-100nm pattern fabrication in e-beam lithography
Author(s): Yoshihiro Todokoro; Hiroshi Yamashita; Yuki Yaegashi
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Paper Abstract

Sub-100nm patterns have been fabricated in thick PMMA film on thick silicon substrates at low beam voltages using commercial e-beam machines. A higher contrast and an improved resolution are obtained by using an IPA development. 50-100nm lines are fabricated in 0.5- 1.0μm PMMA film on silicon substrates with 20-25kV e-beams. Practical aspects of sub-100nm pattern fabrication have been estimated. Pattern accuracy, field butting error, and overlay accuracy are better than ±0.1 μm 3 sigma.

Paper Details

Date Published: 30 June 1986
PDF: 7 pages
Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963683
Show Author Affiliations
Yoshihiro Todokoro, Matsushita Electronics Corporation (Japan)
Hiroshi Yamashita, Matsushita Electronics Corporation (Japan)
Yuki Yaegashi, Matsushita Electronics Corporation (Japan)

Published in SPIE Proceedings Vol. 0632:
Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V
Phillip D. Blais, Editor(s)

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