Proceedings Paper
Sub-100nm pattern fabrication in e-beam lithography| Format | Member Price | Non-Member Price |
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Paper Abstract
Sub-100nm patterns have been fabricated in thick PMMA film on thick silicon substrates at low beam voltages using commercial e-beam machines. A higher contrast and an improved resolution are obtained by using an IPA development. 50-100nm lines are fabricated in 0.5- 1.0μm PMMA film on silicon substrates with 20-25kV e-beams. Practical aspects of sub-100nm pattern fabrication have been estimated. Pattern accuracy, field butting error, and overlay accuracy are better than ±0.1 μm 3 sigma.
Paper Details
Date Published: 30 June 1986
PDF: 7 pages
Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963683
Published in SPIE Proceedings Vol. 0632:
Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V
Phillip D. Blais, Editor(s)
PDF: 7 pages
Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963683
Show Author Affiliations
Yoshihiro Todokoro, Matsushita Electronics Corporation (Japan)
Hiroshi Yamashita, Matsushita Electronics Corporation (Japan)
Hiroshi Yamashita, Matsushita Electronics Corporation (Japan)
Yuki Yaegashi, Matsushita Electronics Corporation (Japan)
Published in SPIE Proceedings Vol. 0632:
Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V
Phillip D. Blais, Editor(s)
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