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Proceedings Paper

Half Micron Cmos Device Fabrication Using Hybrid Lithography With X-Ray And Optical Steppers
Author(s): K. Suzuki; J. Matsui; K. Okada; N. Endo; Y. Iida
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Paper Abstract

Hybrid lithography technology, using a newly developed X-ray stepper and a conventional optical stepper, was applied to half micron CMOS device fabrication. X-ray lithography was applied to four principal mask levels in thirteen lithography steps. In order to correct the geometrical run out in X-ray lithography levels, every die on X-ray masks had been shrunk to 99.99%, in length, of the original pattern. For realizing sufficient resolution and mask alignment accuracy, X-ray mask to wafer spacing was kept at 15 ±lμm, during the mask alignment and X-ray exposure process. Several advanced technologies, such as X-ray exposure in open air, protecting the resist from oxygen, and deep UV curing for X-ray resists, were applied. As a result, a half micron 101 stage CMOS ring-oscillator, which was designed with a submicron alignment margin, has been successfully fabricated, using a single layer resist process.

Paper Details

Date Published: 30 June 1986
PDF: 7 pages
Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963678
Show Author Affiliations
K. Suzuki, NEC Corporation (Japan)
J. Matsui, NEC Corporation (Japan)
K. Okada, NEC Corporation (Japan)
N. Endo, NEC Corporation (Japan)
Y. Iida, NEC Corporation (Japan)

Published in SPIE Proceedings Vol. 0632:
Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V
Phillip D. Blais, Editor(s)

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