
Proceedings Paper
Optimized Material For Bottom Layer Of Trilevel Resist SystemFormat | Member Price | Non-Member Price |
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Paper Abstract
Requirements for the bottom layer of the trilevel resist system are examined with the aid of the SAMPLE simulator. Some conventional positive photoresists and our new bottom layer material RG-3900B are evaluated as a bottom layer. RG-3900B is a phenolic resin mixed with a novel azide compound. It is found that RG-3900B has the following excellent optical properties with relatively short baking time at about 200°C; it strongly absorbs the exposing light and is transparent at visible regions for alignment. Therefore, when applied as a bottom layer, it minimizes linewidth variations on highly reflective substrate topography without degradation of alignment accuracy. RG-3900B has been successfully applied to our various devices with multilevel metalization to obtain fine patterns.
Paper Details
Date Published: 9 July 1986
PDF: 7 pages
Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); doi: 10.1117/12.963655
Published in SPIE Proceedings Vol. 0631:
Advances in Resist Technology and Processing III
C. Grant Willson, Editor(s)
PDF: 7 pages
Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); doi: 10.1117/12.963655
Show Author Affiliations
Noboru Moriuchi, Hitachi, Ltd. (Japan)
Seiichiro Shirai, Hitachi, Ltd. (Japan)
Seiichiro Shirai, Hitachi, Ltd. (Japan)
Takao Iwayanagi, Hitachi, Ltd. (Japan)
Published in SPIE Proceedings Vol. 0631:
Advances in Resist Technology and Processing III
C. Grant Willson, Editor(s)
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