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Proceedings Paper

Functional Characterization Of Positive Optical Resists
Author(s): Rao M. Nagarajan
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Paper Abstract

Photoproducts introduced for wet etching must now resolve one micron images, withstand reactive ion etching, ion milling, RF plasma and high dose ion implantation. Such resists should have necessary consistency to attain the required linewidth control for yield - productivity improvement. The performance characteristics of twelve major brands of Novolac - diazo positive photoresists were evaluated utilizing the following analytical techniques: Glass transition temperature of solids by differential scanning calorimetry yielded values in the range of 40-70°C. Thermo gravimetric analysis indi-cated solvent evaporation in these resists lie in the range of 120 - 145°C and onset of decomposition temperature of resists begin -250°C. Molecular weight distribution (or fingerprint) of these resists by Gel Permeation Chromatography in the G, H and I-line wavelength is investigated and polydispersity index which is a ratio of weight average molecular weight to number average molecular weight lie in the range of 3-4. These evaluated changes will be related to changes in processing parameters such as image stability at higher temperatures and outgassing in low pressure as a function of ther-mal history.

Paper Details

Date Published: 9 July 1986
PDF: 7 pages
Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); doi: 10.1117/12.963649
Show Author Affiliations
Rao M. Nagarajan, Sperry Corporation (United States)

Published in SPIE Proceedings Vol. 0631:
Advances in Resist Technology and Processing III
C. Grant Willson, Editor(s)

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