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Proceedings Paper

Resist Characterization And Optimization Using A Hevelonment Rimulation Romnuter Nrooram, Prostm.
Author(s): Cesar M. Garza; Steven P. Grindle
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Paper Abstract

Computer simulation is a well established tool in the design and processing of integrated circuits. The best known such simulation program in microlithography is SAMPLE (1), which is based on the Dill model (2). A new computer simulation program, PROSIM, has been developed (3). It uses the aerial image calculated by SAMPLE and the string development algorithm of SAMPLE, but replaces calculated photoresist development rates with rates measured using in-situ interferometry. Three different positive photoresist systems were investigated under varying process conditions typically examined during the characterization process. PROSIM simulated profiles and exposure latitudes are in good agreement with experimental measurements, showing that PROSIM can be used as an effective tool to aid in the characterization and optimization of positive resist processes.

Paper Details

Date Published: 9 July 1986
PDF: 7 pages
Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); doi: 10.1117/12.963633
Show Author Affiliations
Cesar M. Garza, Texas Instruments Incorporated (United States)
Steven P. Grindle, Perkin-Elmer/Applied Optics Operations (United States)

Published in SPIE Proceedings Vol. 0631:
Advances in Resist Technology and Processing III
C. Grant Willson, Editor(s)

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