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Proceedings Paper

Space coherence effect of 1.3µm InGaAsP/InP DCC structure semiconductor laser
Author(s): Liu Yi-Chun; Dina Tie-Nan; Zhang Yue--Qing
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Paper Abstract

Far-Field pattern of 1.3µm InGaAsP/InP DCC structure semiconductor laser is calculated by the strong coupling method. Experimental data agree with the theorticat results with the FAHP beam divergence 0 i < 300. Space coherence characteristic of 1.3pm InGaAsP/InP DCC structure semiconductor laser is good. The impeltent action of the 1st active layer and the selection mode action of the 2nd active layer F-P cavity are analyzed for DCC structure laser.

Paper Details

Date Published: 5 January 1990
PDF: 8 pages
Proc. SPIE 1177, Integrated Optics and Optoelectronics, (5 January 1990); doi: 10.1117/12.963342
Show Author Affiliations
Liu Yi-Chun, Northeast Normal University (China)
Dina Tie-Nan, Changchun Institute of Physics (China)
Zhang Yue--Qing, Changchun Institute of Physics (China)

Published in SPIE Proceedings Vol. 1177:
Integrated Optics and Optoelectronics
Leon McCaughan; Mark A. Mentzer; Song-Tsuen Peng; Henry J. Wojtunik; Ka Kha Wong, Editor(s)

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