Share Email Print

Proceedings Paper

Study Of Polarization Effects On Scatter From Si Wafers
Author(s): John G. Kepros; Eldon N. Okazaki
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The analysis of scattering test results often raises questions of whether facility or sample anisotropy is responsible for variation in data. The sample may appear macro-scopically isotropic yet, as in the case of a Si wafer, may affect results due to its crystal cleavage or orientation relative to observation direction. In addition, there may be point-to-point variation in sample surface characteristics leading to slightly different results depending on beam size or position tested. The relevance of these considerations can best be assessed when all parameters are tested in a matrix-like study. Other data which affect scatter are: Surface contamination, ellipsometry (depolarization effects), and surface profilometry (roughness). The scatter-test matrix (in addition to contamination ellipsometry, and profilometry data) for a 6.0 inch diameter wafer includes: Beam size (1.0, 2.0 and 5.0 inches), beam polarization (vertical vs horizontal), sample cleavage axis orientation with re-spect to detector sweep plane (perpendicular vs parallel), and beam band-width (full xenon arc vs 100 Angstroms wide and peaked at 5000 Angstroms). Similar tests were performed (except with the 5.0 inch beam) with 5.0 inch samples cleaved at (1,0,0) and (5,1,1) crystal orientations.

Paper Details

Date Published: 2 January 1990
PDF: 11 pages
Proc. SPIE 1165, Scatter from Optical Components, (2 January 1990); doi: 10.1117/12.962857
Show Author Affiliations
John G. Kepros, Lockheed Missiles and Space Co., Inc. (United States)
Eldon N. Okazaki, Lockheed Missiles and Space Co., Inc. (United States)

Published in SPIE Proceedings Vol. 1165:
Scatter from Optical Components
John C. Stover, Editor(s)

© SPIE. Terms of Use
Back to Top