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Proceedings Paper

Charge Transport Enhanced Optical Nonlinearities In Semiconductors
Author(s): Alan Kost; Elsa Garmire; Tom Hasenberg
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Paper Abstract

Low power nonlinear optical materials are needed for devices such as all-optical spatial light modulators and optical wave mixers (devices which couple energy between two or more optical beams). In particular, operating intensities of a few milliwatts/cm2 are desirable. It is not essential that the response times of the materials be extremely short. By taking advantage of the inherent parallelism of optics, significant information processing can be achieved even if response times are of the order of microseconds. With these requirements in mind, we are studying charge transport enhanced optical nonlinearities in semiconductors. A bonus of this approach is that these materials are compatible with existing semiconductor technologies.

Paper Details

Date Published: 4 January 1990
PDF: 8 pages
Proc. SPIE 1148, Nonlinear Optical Properties of Materials, (4 January 1990); doi: 10.1117/12.962153
Show Author Affiliations
Alan Kost, University of Southern California (United States)
Elsa Garmire, University of Southern California (United States)
Tom Hasenberg, Hughes Research Laboratories (United States)

Published in SPIE Proceedings Vol. 1148:
Nonlinear Optical Properties of Materials
Howard R. Schlossberg; Raymond V. Wick, Editor(s)

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