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Proceedings Paper

Photorefractive Effects In Semiconductors For Deep Level Spectroscopy
Author(s): George C. Valley
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Paper Abstract

This talk discussed application of the electron/hole model of the photorefractive effect to observations in GaAs:EL2, InP:Fe, and CdTe:V that were obtained with cw and picosecond lasers. In this model both electrons and holes are photoionized from a single defect level with two ionization states (e.g., EL20 and EL2+) as discussed by Valley (1986) and Strohkendl et al. (1986). In photorefractive semicon-ductors where the diffusion length is much larger than typical grating periods, it can be shown that the gain coefficient for photorefractive beam coupling depends primarily on two properties of the deep level defect, an effective trap density NE = N1N2/(N1 + N2) and a competition factor ξ = (ae - ah)/(ae + ah) where N1 and N2 are the densities of the two levels while ae and ah are the absorption coefficients for production of electrons and holes. Other properties of the deep level defect, such as the recombination cross sections, can be obtained from corrections to the gain formulas for large grating periods and for low irradiances (Valley et al., 1988).

Paper Details

Date Published: 4 January 1990
PDF: 2 pages
Proc. SPIE 1148, Nonlinear Optical Properties of Materials, (4 January 1990); doi: 10.1117/12.962152
Show Author Affiliations
George C. Valley, Hughes Research Laboratories (United States)

Published in SPIE Proceedings Vol. 1148:
Nonlinear Optical Properties of Materials
Howard R. Schlossberg; Raymond V. Wick, Editor(s)

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