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Proceedings Paper

Large, Fast, Free-Electron-Induced Optical Nonlinearities
Author(s): P. A. Wolff; S. Y. Auyang
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Paper Abstract

HgTe, HgMnTe, and zero-gap HgCdTe are shown to have record, picosecond speed, optical nonlinearities at 10.6u. The largest occurs in Hg0.84Cd o.16T-e, whose X(3)=2x10-3 esu at 80K. A theoretical model suggests that these nonlinearities are caused by laser-induced carrier temperature modulation, that produces large carrier density variations in zero-gap materials. The thermal processes have saturation power densities in the 100kW/cm2 - 1MW/cm2 range. At such intensities, the dielectric constant of HgTe is modulated by about 10%.

Paper Details

Date Published: 4 January 1990
PDF: 10 pages
Proc. SPIE 1148, Nonlinear Optical Properties of Materials, (4 January 1990); doi: 10.1117/12.962147
Show Author Affiliations
P. A. Wolff, NEC Research Institute (United States)
S. Y. Auyang, Francis Bitter National Magnet Laboratory (United States)

Published in SPIE Proceedings Vol. 1148:
Nonlinear Optical Properties of Materials
Howard R. Schlossberg; Raymond V. Wick, Editor(s)

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