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Proceedings Paper

Scanning Laser And Optical Beam Induced Current Methods For Failure Analysis Of Electronic Devices (#)
Author(s): Gaetano Grasso; Michele Muschitiello; Michele Stucchi; Enrico Zanoni
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Paper Abstract

Optical beam testing methods offer several advantages with respect to conventional Scanning Electron Microscopy (SEM) techniques for failure analysis of integrated circuits and discrete devices: they do not require vacuum, avoid MOS and oxide damaging in OBIC (Optical Beam Induced Current) tests. This paper describes the application of scanning laser techniques to failure analysis of integrated circuits and discrete devices. Results have been obtained by means of a commercially available laser system (Biorad Lasersharp SOM 150), equipped with a visible (He-Ne 633 nm, 15 mW) and an IR (laser-diode-pumped Nd:YAG 1320 nm, 25 mW) laser source.

Paper Details

Date Published: 28 September 1989
PDF: 14 pages
Proc. SPIE 1139, Optical Storage and Scanning Technology, (28 September 1989); doi: 10.1117/12.961768
Show Author Affiliations
Gaetano Grasso, Tecnopolis CSATA (Italy)
Michele Muschitiello, Tecnopolis CSATA (Italy)
Michele Stucchi, Tecnopolis CSATA (Italy)
Enrico Zanoni, Universita' di Padova (Italy)

Published in SPIE Proceedings Vol. 1139:
Optical Storage and Scanning Technology
Tony Wilson, Editor(s)

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