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Proceedings Paper

Optimized Resist Process For High Na G-Line Lenses
Author(s): Mark G. Bigelow; Harrie van der Putten
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Paper Abstract

Statistically designed screening experiments were conducted with several commercially available g-line resists to determine the most significant process factors for maximizing Depth of Focus for a new g-line lens with an NA of 0.43 and a field diameter of 21.2 mm. The experiments determined the significance of process factors such as Softbake Temperature, Resist Coat Thickness, Post Exposure Bake Temperature, Develop Temperature, Develop Time, Develop Concentration and Develop Agitation. This experimental approach lead to a much shorter process evaluation cycle. Comparative results of Depth of Focus for each of the materials tested are reported along with extended results of the optimized process critical dimension bias and linearity. First time extended results with the Zeiss 107861 lens are reported for the optimized process, which was developed for one of the resists, to achieve a Usable Depth of Focus of 2.0 μm at 0.7 μm resolution.

Paper Details

Date Published: 11 October 1989
PDF: 22 pages
Proc. SPIE 1138, Optical Microlithography and Metrology for Microcircuit Fabrication, (11 October 1989); doi: 10.1117/12.961742
Show Author Affiliations
Mark G. Bigelow, ASM Lithography (The Netherlands)
Harrie van der Putten, ASM Lithography (The Netherlands)

Published in SPIE Proceedings Vol. 1138:
Optical Microlithography and Metrology for Microcircuit Fabrication
Michel J. Lacombat; Stefan Wittekoek, Editor(s)

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