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Proceedings Paper

New Developments In Wafer Stepper Technology For Submicron Devices
Author(s): S. Wittekoek; J. Greeneich; M. van den Brink; B. Katz
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Paper Abstract

Advanced wafer steppers must be capable of meeting production requirements for devices with 0.5 μm design rules. Such devices require a very good optical performance matched to advanced resist processing techniques. Overlay performance at this resolution is also critical, with capability needed in the region of 100 nm. This paper gives an overview of developments in wafer stepper technology that have taken place to meet these requirements. The advances of projection lenses for 5x reduction steppers is reviewed. The performance of recently developed g-line and i-line lenses with numerical apertures greater than 0.4 and fields larger then 21 mm are reported. It is shown that half micron resolution can be achieved with i-line steppers. Furthermore, the possible extension to deep UV wavelengths is discussed. The overlay accuracy improvements recently realized on production steppers (PAS 2500) are discussed. It is concluded that single machine overlay better than 0.1 μm can be expected in the near future. In combination with short wavelength lenses, this means that wafer stepper technology can be extended down to at least 0.3 μm.

Paper Details

Date Published: 11 October 1989
PDF: 12 pages
Proc. SPIE 1138, Optical Microlithography and Metrology for Microcircuit Fabrication, (11 October 1989); doi: 10.1117/12.961740
Show Author Affiliations
S. Wittekoek, ASM Lithography (The Netherlands)
J. Greeneich, ASM Lithography (The Netherlands)
M. van den Brink, ASM Lithography (The Netherlands)
B. Katz, ASM Lithography (The Netherlands)

Published in SPIE Proceedings Vol. 1138:
Optical Microlithography and Metrology for Microcircuit Fabrication
Michel J. Lacombat; Stefan Wittekoek, Editor(s)

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