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Proceedings Paper

Role Of Nonstoichiometry On UV Absorption And Luminescence In High-Purity Silica.
Author(s): Hiroyuki Nishikawa; Ryoichi Tohmon; Kaya Nagasawa; Yoshimichi Ohki; Yoshimasa Hama
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Paper Abstract

Role of nonstoichiometry on the formation of UV absorption and luminescence bands in high-purity silica is discussed. The 5.0-eV and 3.8-eV bands are observed in "oxygen-deficient" and "oxygen-surplus" silica, respectively. The 5.0-eV band is caused by oxygen vacancies (≡Si-Si≡) and the 3.8-eV band by peroxy linkages (≡Si-0-0-Si≡). Synthesis conditions and thermal history after the synthesis are shown to affect the formation of defects such as oxygen vacancies and peroxy linkages. The 2.7-eV luminescence band observed in "oxygen-deficient" silica is shown to be primarily due to the oxygen vacancies.

Paper Details

Date Published: 21 December 1989
PDF: 9 pages
Proc. SPIE 1128, Glasses for Optoelectronics, (21 December 1989); doi: 10.1117/12.961473
Show Author Affiliations
Hiroyuki Nishikawa, Waseda University (Japan)
Ryoichi Tohmon, Waseda University (Japan)
Kaya Nagasawa, Sagami Institute of Technology (Japan)
Yoshimichi Ohki, Waseda University (Japan)
Yoshimasa Hama, Waseda University (Japan)

Published in SPIE Proceedings Vol. 1128:
Glasses for Optoelectronics
Giancarlo C. Righini, Editor(s)

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