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Proceedings Paper

Heating Of Gaas And Inp By Incoherent Radiation
Author(s): Thomas R. Block; Craig W. Farley; Tae S. Kim; Steve D. Lester; Ben G. Streetman
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Paper Abstract

An investigation of the heating behavior of GaAs and InP in a Rapid Thermal Annealing (RTA) system shows a significant variation in the temperature response of these materials. These compound semiconductors are heated with incoherent light in an RTA system where a Si sample is used for temperature feedback. The temperatures of GaAs and InP samples thermally isolated from the Si control sample during heating may overshoot or undershoot the desired temperature by hundreds of degrees. When the samples are thermally connected to the Si control sample by means of a susceptor, the temperatures of the III-V semiconductors follow the programmed temperature closely. Much of the variation in temperature response can be correlated with free carrier concentrations in the materials, but other material properties also play a role. This significant variation in temperature response has practical implications for the design and application of RTA systems.

Paper Details

Date Published: 26 June 1986
PDF: 6 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961205
Show Author Affiliations
Thomas R. Block, The University of Texas (United States)
Craig W. Farley, The University of Texas (United States)
Tae S. Kim, The University of Texas (United States)
Steve D. Lester, The University of Texas (United States)
Ben G. Streetman, The University of Texas (United States)

Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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