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Proceedings Paper

An FTIR And RGA Study Of The Outgassing Of Photoresist During Ion Implant
Author(s): Bhola N. Mehrotra; Lawrence A. Larson
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Paper Abstract

Fourier Transform Infra-Red Spectroscopy (FTIR) along with total and partial pressure measurements have been used to characterize the severe resist outgassing that occurs during high current ion implantation. This outgassing is confirmed to be mainly the evolution of hydrogen as shown by Residual Gas Analysis(RGA). Hydrogen is liberated by the breaking of C-H bonds present in the polymeric component of the resist, thus resulting in carbon layer formation. This effect is clearly observed by FTIR. Due to this mechanism, outgassing is found to be independent of the heat treatments used to cure the resists for temperatures above that necessary to evolve solvents (90C). This study concentrates on high-dose, high current conditions. The outgassing behaviorfor these cases is saturated as a function of energy, current, and dose and the results indicate near total conversion of the resist to carbon.

Paper Details

Date Published: 26 June 1986
PDF: 5 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961196
Show Author Affiliations
Bhola N. Mehrotra, National Semiconductor Corporation (United States)
Lawrence A. Larson, National Semiconductor Corporation (United States)

Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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