Proceedings Paper
Scanning Deep Level Transient Spectroscopy (DLTS) Of GaAs| Format | Member Price | Non-Member Price |
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Paper Abstract
The use of scanning deep level transient spectroscopy (SDLTS) in the investigation of deep level trap distributions in LEC GaAs is described. Technique is based on electron beam induced current transients in a Schottky barrier, allowing approx. 1 micron spatial resolution. Results indicating enhanced hole trap concentrations around dislocation cores and walls are presented.
Paper Details
Date Published: 26 June 1986
PDF: 6 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961195
Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)
PDF: 6 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961195
Show Author Affiliations
Frederik Sporon-Fiedler, Hewlett-Packard Co. (United States)
Eicke R. Weber, University of California (United States)
Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)
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