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Proceedings Paper

Electrical Characterization Of MIS Interfaces
Author(s): J. F. Wager
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Paper Abstract

Characterization of metal-insulator-semiconductor (MIS) interfaces by capacitance-voltage (C-V) analysis is reviewed. Particular emphasis is placed upon III-V semiconductor inter-faces which are compared to the nearly ideal thermal Si02/Si system.

Paper Details

Date Published: 26 June 1986
PDF: 5 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961193
Show Author Affiliations
J. F. Wager, Oregon State University (United States)

Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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