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Proceedings Paper

New Optical Characterization Methods Of Molecular Beam Epitaxy-Grown Multi-Quantum-Well Structures Using Tunable Light Sources
Author(s): J. J. Song; Y. S. Yoon; A. Fedotowsky; M. Naganuma; Y. B. Kim; W. T. Masselink; H. Morkoo; T. Vreeland
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Paper Abstract

Low temperature photoluminescence spectra measured from MBE GaAs/AℓxGa1-xAs superlattices with different excitation photon energies were analyzed to reveal superxlattice well thickness variations along the MBE growth direction. Due to their unique electrical and optical properties, semiconducting multi-quantum-well (MQW) structures are receivIng much attention fo; their applications in microstructure devices such as HEMT, SEED , and tunable lasers. The properties of MQW structures are greatly affected by the MQW heterointerface qualities, impurity contents, and layer thickness irregularities. So far, molecular-beam-epitaxy (MBE) prepared MQW structures are found to exhibit superior sample qualities i Tany respects, and a great deal of effort is being made to further advance MBE technology. The characterization of multi-layered structures, however, has not progressed as fast as the development of thin film growth methods. Among the various sample characterization methods, optical techniques offer certain advantages since the test results can be obtained in a relatively quick and simple manner. Besides, the nondestructive (or non-contact) nature of optical methods provides opportunities for repetitive evaluations, which improves accuracy in sample characterizations.

Paper Details

Date Published: 26 June 1986
PDF: 5 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961187
Show Author Affiliations
J. J. Song, University of Southern California (United States)
Y. S. Yoon, University of Southern California (United States)
A. Fedotowsky, University of Southern California (United States)
M. Naganuma, University of Southern California (United States)
Y. B. Kim, University of Southern California (United States)
W. T. Masselink, University of Illinois (United States)
H. Morkoo, University of Illinois (United States)
T. Vreeland, California Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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