Proceedings Paper
Contact Resistance Measurement Technique For Amorphous Semiconductors| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
A technique for measuring the electrical characteristics of contacts to doped hydrogenated amorphous silicon (a-Si:H) or other high-resistivity thin film semiconductors is developed. Experimental results for metal and conductive transparent oxide contacts to both n- and p-type a-Si:H are presented and the significance of these values to solar cell applications discussed.
Paper Details
Date Published: 12 March 1986
PDF: 6 pages
Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); doi: 10.1117/12.961073
Published in SPIE Proceedings Vol. 0617:
Amorphous Semiconductors for Microelectronics
David Adler, Editor(s)
PDF: 6 pages
Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); doi: 10.1117/12.961073
Show Author Affiliations
H. Schade, RCA Laboratories (United States)
Z E. Smith, RCA Laboratories (United States)
Published in SPIE Proceedings Vol. 0617:
Amorphous Semiconductors for Microelectronics
David Adler, Editor(s)
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