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Proceedings Paper

Amorphous Silicon Alloy Thin Film Transistor Operation With High Field Effect Mobility
Author(s): M. Shur; C. Hyun; M. Hack; W. Czubatyj
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Paper Abstract

A new theory of a-Si Thin Film Transistor (TFT) operation is presented. In addition to the below and above threshold regimes described previously, it predicts two new regimes of operation which occur at very high densities of the induced charge in the a-Si TFT channel. Ina crystalline-like regime the free electron concentration exceeds the localized charge concentration at the a-Si-insulator interface. In a transitional regime (at lower densities of the induced charge) almost all localized states in the energy gap of amorphous silicon near the interface are filled. In the crystalline-like regime, the field-effect mobility is close to the band mobility and the operation of an a-Si TFT is truly similar to the operation of a crystalline field-effect transistor. Our estimates show that the gate voltage necessary to achieve the crystalline-like regime is about 50 V for an a-Si TFT with an insulator 1000 Å thick and a relative permittivity of approximately 3.9. Much lower threshold voltages (close to 8 volts or so) may be achieved by using a gate insulator with a higher dielectric constant.

Paper Details

Date Published: 12 March 1986
PDF: 11 pages
Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); doi: 10.1117/12.961070
Show Author Affiliations
M. Shur, University of Minnesota (United States)
C. Hyun, University of Minnesota (United States)
M. Hack, Energy Conservation Devices, Inc. (United States)
W. Czubatyj, Energy Conservation Devices, Inc. (United States)

Published in SPIE Proceedings Vol. 0617:
Amorphous Semiconductors for Microelectronics
David Adler, Editor(s)

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