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Proceedings Paper

Modeling Photovoltaic Infrared Detector Transient Response To Pulsed Gamma Radiation
Author(s): Paul E. Thurlow
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Paper Abstract

Test exposures of cooled photovoltaic diode arrays to short (25 nanosecond) bursts of 1-2 mev gamma radiation have produced characteristic signal decay functions dependent on diode material and geometry. A diode transient response model was desired which: (1) would correlate pv diode measured transient decay behavior with diode design parameters, and; (2) would form a basis for design of pv diode arrays which exhibit desired decay behavior. It appeared at the outset of this study that experimentally measured diode decay functions were probably associated with charge carrier transient production and subsequent diffusion into the p-n junctions. Use of a charge carrier thermal diffusion model therefore appeared appropriate, and later was found to produce voltage decay results which agreed well with test data.

Paper Details

Date Published: 11 October 1989
PDF: 6 pages
Proc. SPIE 1107, Infrared Detectors, Focal Plane Arrays, and Imaging Sensors, (11 October 1989); doi: 10.1117/12.960648
Show Author Affiliations
Paul E. Thurlow, Santa Barbara Research Center (United States)

Published in SPIE Proceedings Vol. 1107:
Infrared Detectors, Focal Plane Arrays, and Imaging Sensors
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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