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Proceedings Paper

Characterization Of MOCVD Films
Author(s): W. H. Wright; P. L. Anderson; P. K. Liao; A. J. Syllaios
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Paper Abstract

The far infrared reflectance technique has been used to characterize ZnTe and CdTe films grown using Metal Organic Chemical Vapor Deposition (MOCVD) on GaAs substrates. Carrier concentrations, derived from the reflectance measurements, decreased with increasing ZnTe film thickness as a result of the large lattice mismatch between ZnTe and GaAs. This mismatch produces a high strain, high dislocation region near the interface. The uniformity of CdTe films grown on GaAs substrates in two different types of reactors are compared. The thickness and carrier concentration is found to be far more uniform for films grown in a vertical flow, rotating susceptor reactor than for films grown in a conventional linear flow reactor.

Paper Details

Date Published: 12 September 1989
PDF: 9 pages
Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); doi: 10.1117/12.960633
Show Author Affiliations
W. H. Wright, Texas Instruments Incorporated (United States)
P. L. Anderson, Texas Instruments Incorporated (United States)
P. K. Liao, Texas Instruments Incorporated (United States)
A. J. Syllaios, Texas Instruments Incorporated (United States)

Published in SPIE Proceedings Vol. 1106:
Future Infrared Detector Materials
Jan W. Baars; Randolph E. Longshore, Editor(s)

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