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Proceedings Paper

The Scope Of MOVPE For Advanced IR CMT Detectors
Author(s): J. B. Mullin; S. J.C. Irvine; J. Giess; J. S. Gough; A. Royle; M. C.L. Ward; G. Crimes
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Paper Abstract

Recent developments in Metalorganic Vapour Phase Epitaxy (MOVPE) of CMT are reviewed and the potential of the technology for producing advanced IR cadmium mercury telluride (CMT) detectors, particularly planar diode arrays, are assessed. The assessment covers the current status of layer production, including compositional uniformity, surface quality and crystalline perfection as well as the electrical properties and doping. In addition, the role of the newer, low temperature precursors as a means of producing advanced detector structures are considered. Recent diode results are reported and it is shown that MOVPE CMT, either on CdTe or GaAs substrates, is capable of producing state-of-the-art performance for diode arrays. The future scope of photolysis for in situ device fabrication is also considered, together with some recent results on photo-patterning of epitaxial CdTe.

Paper Details

Date Published: 12 September 1989
PDF: 15 pages
Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); doi: 10.1117/12.960625
Show Author Affiliations
J. B. Mullin, Royal Signals & Radar Establishment (England)
S. J.C. Irvine, Royal Signals & Radar Establishment (England)
J. Giess, Royal Signals & Radar Establishment (England)
J. S. Gough, Royal Signals & Radar Establishment (England)
A. Royle, Royal Signals & Radar Establishment (England)
M. C.L. Ward, Royal Signals & Radar Establishment (England)
G. Crimes, Philips Components (England)

Published in SPIE Proceedings Vol. 1106:
Future Infrared Detector Materials
Jan W. Baars; Randolph E. Longshore, Editor(s)

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