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Proceedings Paper

Picosecond Response Of A Planar GAAS/AL[sub]0.3[/sub]GA[sub]0.7[/sub]AS Schottky Barrier Photodiode
Author(s): D. H. Lee; S. S. Li; N. G. Paulter
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Paper Abstract

A high-speed high-sensitivity planar GaAs/AL0.3GA0.7AS heterostructure Schottky barrier photodiode has been de-signed, fabricated, and characterized. A highly doped A10.3GA0.7AS buffer layer is used to reduce the series resistance and the undesired diffusion tailing. Furthermore, surface passivation and antireflection coating, with various dielectric films, are performed to reduce the reverse-bias dark current and the reflection loss of the incident light, thereby significantly improves the sensitivity of the photodiode. The measured external quantum efficiency and responsivity are 60% to 77% and 0.47 A/W to 0.6 A/W, respectively, for the wavelength range of 0.5 μm to 0.84 μm. A risetime of 8.5 ps and a 3-dB cutoff frequency of 50 GHz have been measured.

Paper Details

Date Published: 17 January 1989
PDF: 11 pages
Proc. SPIE 0995, High Frequency Analog Communications, (17 January 1989); doi: 10.1117/12.960146
Show Author Affiliations
D. H. Lee, University of Florida (United States)
S. S. Li, University of Florida (United States)
N. G. Paulter, Los Alamos National Laboratory (United States)

Published in SPIE Proceedings Vol. 0995:
High Frequency Analog Communications
Paul Sierak, Editor(s)

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