Detailed calculations have been made of the change in refractive index and absorption of InP, GaAs, GaSb, InAs, and InSb produced by electrical injection of electrons or holes. Bandfilling, band-gap shrinkage, and the plasma effect were taken into account. A wide range of carrier concentrations and optical wavelengths was considered. The total electro-optic effect is relatively large at high levels of injection (or depletion). Index changes of 10-2, or more, are predicted and suggest that low-loss phase modulators and switches using carrier injection are feasible in these materials.

Date Published: 9 February 1989
PDF: 20 pages
Proc. SPIE 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II, (9 February 1989); doi: 10.1117/12.960125

Published in SPIE Proceedings Vol. 0994:
Optoelectronic Materials, Devices, Packaging, and Interconnects II
Glen M. McWright; Henry J. Wojtunik, Editor(s)