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Proceedings Paper

A New Technique For Testing Surface Passivation Materials Of GaAs Photodiodes
Author(s): Gregory C. DeSalvo; Allen M. Barnett
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Paper Abstract

Surface recombination is very high for unpassivated GaAs photodiodes and hinders performance by lowering Jph while increasing Jo. Present passivation techniques use a GaA1As window layer to reduce recombination at the GaAs surface. However, problems of chemical instability and ohmic contact formation make GaAlAs less than the ideal material. Other potential window materials may better passivate the surface of GaAs while not incorporating the same problems as GaA1As. A new device design is presented which uses localized liquid phase epitaxy (L2PE) to obtain a multilevel structure. This device is useful in testing the performance of different passivating candidates for GaAs by allowing comparison of identical photodiodes with and without passivation. The structure avoids ohmic contact problems to the window layer and permits non-destructive testing of all semiconductor layers.

Paper Details

Date Published: 26 April 1989
PDF: 8 pages
Proc. SPIE 0992, Fiber Optics Reliability: Benign and Adverse Environments II, (26 April 1989); doi: 10.1117/12.960062
Show Author Affiliations
Gregory C. DeSalvo, University of Delaware (United States)
Allen M. Barnett, University of Delaware (United States)

Published in SPIE Proceedings Vol. 0992:
Fiber Optics Reliability: Benign and Adverse Environments II
Roger A. Greenwell; Dilip K. Paul; Shekhar G. Wadekar, Editor(s)

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