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Proceedings Paper

InGaAsP Laser Diodes
Author(s): Gregory H. Olsen
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Paper Abstract

The advantages and properties of InGaAsP laser diodes in the 1.0 - 1.7 μm spectral region are discussed. The structure, growth (both vapor and liquid phase epitaxy) and operating principles of these devices are briefly reviewed. State of the art device results from 1.3 and 1.55 μm devices are then presented. The modal, thermal and reliability properties of these devices, as well as their commercial availability, are also discussed and possible directions for future applications are considered.

Paper Details

Date Published: 19 September 1980
PDF: 9 pages
Proc. SPIE 0224, Fiber Optics for Communications and Control, (19 September 1980); doi: 10.1117/12.958688
Show Author Affiliations
Gregory H. Olsen, David Sarnoff Research Center (United States)

Published in SPIE Proceedings Vol. 0224:
Fiber Optics for Communications and Control
Charles W. Kleekamp, Editor(s)

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