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Proceedings Paper

Dimensional Control And Profile Contouring Of Plasma Etched Polysilicon
Author(s): Steven C. Selbrede
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Paper Abstract

Linewidth control and profile contouring of polysilicon by anisotropic plasma etching with Freon 115, (CC1F5), and Freon 115/oxygen gas mixtures were investigated utilizing an LFE model 1002-P plana plasma etcher with a laser interferometric endpoint detector. It was found that Freon 115 etches anisotropicly with a reentrant edge profile and good photoresist and Si02 etch selectivity. A slight amount of undercutting was observed with overetching and was found to be related to trace amounts of oxygen in the Freon 115 plasma discharge. Freon 115/oxygen mixtures were investigated. It was determined that the polysilicon etch rate and the degree of anisotropy depends strongly on the oxygen concentration. Various combinations of anisotropic/isotropic etch sequences were found to have useful polysilicon edge contouring properties.

Paper Details

Date Published: 5 September 1980
PDF: 8 pages
Proc. SPIE 0221, Developments in Semiconductor Microlithography V, (5 September 1980); doi: 10.1117/12.958624
Show Author Affiliations
Steven C. Selbrede, National Semiconductor Corporation (United States)

Published in SPIE Proceedings Vol. 0221:
Developments in Semiconductor Microlithography V
James W. Dey, Editor(s)

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