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Proceedings Paper

Tradeoffs Between Uniformity, Selectivity And Pattern Fidelity In Plasma Etching
Author(s): Marvin Hutt
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Paper Abstract

A tutorial paper clearly defining plasma etch process requirement in the semiconductor industry. Defining pattern fidelity, lateral etch rate, anisotropy, photoresist integrity, etch uniformity and selectivity. Why etch uniformity independent of viscosity, power and pressure is needed to process VLSI circuits, and how etch uniformity is achieved. The bottom line as in all process requirements is a complete process with high yields. A discussion of the trade off requirements facing the process engineer today is also pre-sented. This will include the trade offs of selectivity versus photoresist integrity and pattern fidelity.

Paper Details

Date Published: 5 September 1980
PDF: 7 pages
Proc. SPIE 0221, Developments in Semiconductor Microlithography V, (5 September 1980); doi: 10.1117/12.958623
Show Author Affiliations
Marvin Hutt, Materials Research Corporation (United States)

Published in SPIE Proceedings Vol. 0221:
Developments in Semiconductor Microlithography V
James W. Dey, Editor(s)

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