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Proceedings Paper

Nearly Perfect Reticles For Direct Wafer Steppers
Author(s): Harry L. Coleman
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Paper Abstract

Methods of locating and correcting' defects on 10X reticles used for optical step-and-repeat on silicon wafers are presented. The impact of defect type, size, location, and wafer processing on VLSI devices with 1 to 3μm geometries over large clear and dark fields is examined and efforts to minimize defects by improving equipment and materials are discussed. Data gathered from visual and computer analysis are also included.

Paper Details

Date Published: 5 September 1980
PDF: 7 pages
Proc. SPIE 0221, Developments in Semiconductor Microlithography V, (5 September 1980); doi: 10.1117/12.958619
Show Author Affiliations
Harry L. Coleman, National Semiconductor Corporation (United States)

Published in SPIE Proceedings Vol. 0221:
Developments in Semiconductor Microlithography V
James W. Dey, Editor(s)

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