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Proceedings Paper

Area Array X-Ray Sensors
Author(s): D. M. McCann; M. C. Peckerar; W. Mend; D. A. Schwartz; R. E. Griffiths; G. Polucci; M. V. Zombeck
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Paper Abstract

In this paper we describe the considerations necessary 1Dr the optimization of CCD area array sensors for x-rays in the 0.5-15KeV energy range. It is shown that a backside illuminated, unthinned (-10 mil thick) deep depletion mode CCD fabricated on a high resis-tivity substrate (-15 KΩ-cm) is best for imaging with this x-ray range. Preliminary data demonsttating the functionality of such an area array is presented. Line array test structures fabricated along with the area array indicate that transfer efficiency for this CCD was better than 0.9999 when operated at 80oK. A slit imaged in the backside illuminated mode gave image with a FWHM approximately 60μm. The full well capacity of a 60μm x 20μm pixel was approximately 5 x 10 charges. X-ray sensitivity was demonstrated using MnTc photons ( 5.9 KeV). Large leakage currents were encountered due to the deep depletion. However,one sigma uncertainty in signal caused by generation was -77 charges at 80oK.

Paper Details

Date Published: 7 May 1980
PDF: 11 pages
Proc. SPIE 0217, Advances in Focal Plane Technology, (7 May 1980); doi: 10.1117/12.958484
Show Author Affiliations
D. M. McCann, Westinghouse Electric Corporation, (United States)
M. C. Peckerar, Westinghouse Electric Corporation (United States)
W. Mend, Westinghouse Electric Corporation, (United States)
D. A. Schwartz, Harvard-Smithsonian Center for Astrophysics (United States)
R. E. Griffiths, Harvard-Smithsonian Center for Astrophysics (United States)
G. Polucci, Harvard-Smithsonian Center for Astrophysics (United States)
M. V. Zombeck, Harvard-Smithsonian Center for Astrophysics (United States)

Published in SPIE Proceedings Vol. 0217:
Advances in Focal Plane Technology
William S. Chan, Editor(s)

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