
Proceedings Paper
Monolithic HgCdTe Focal Plane Array StructuresFormat | Member Price | Non-Member Price |
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Paper Abstract
Sophisticated infrared imaging systems require complex focal plane device structures to perform the basic functions of (1) detection, (2) time-delay-and-integration (TDI), (3) multiplexing, and possibly (4) scanning in large array formats with minimal on-focal-plane power dissipation. Monolithic HgCdTe charge transfer device structures are promising candidates for many focal plane requirements. Charge coupled devices (CCDs) are the natural structure for scanning system focal pl.nes which utili:e TN. Charge injection devices (CID's) are directly applicable to staring system focal plane requirements. This paper discusses the applicability and design considerations of various devices which have been developed using this technology.
Paper Details
Date Published: 7 May 1980
PDF: 8 pages
Proc. SPIE 0217, Advances in Focal Plane Technology, (7 May 1980); doi: 10.1117/12.958475
Published in SPIE Proceedings Vol. 0217:
Advances in Focal Plane Technology
William S. Chan, Editor(s)
PDF: 8 pages
Proc. SPIE 0217, Advances in Focal Plane Technology, (7 May 1980); doi: 10.1117/12.958475
Show Author Affiliations
C. G. Roberts, Texas Instruments Incorporated (United States)
S R . Borrello, Northrop Research & Technology Center (United States)
S R . Borrello, Northrop Research & Technology Center (United States)
R. A. Chapman, Northrop Research & Technology Center (United States)
Published in SPIE Proceedings Vol. 0217:
Advances in Focal Plane Technology
William S. Chan, Editor(s)
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