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Proceedings Paper

Monolithic InSb Imaging Arrays With Charge-Coupled Device (CCD) Readout
Author(s): W. E. Miller; H. D. Hendricks; R. D. Thom
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Paper Abstract

Detection of infrared radiation and signal readout has been demonstrated on a monolithic InSb charge coupled infrared imaging device (CCIRID). The device is a 20- element linear imager with MOS detectors coupled to a four-phase, surface channel, charge transfer structure. The charge transfer device is p-channel and has planar ion implanted diode structures for fat zero input and charge readout. Charge transfer efficiency of the present 20-element linear imager is 0.995. Sensitivity measurements on the MOS infrared detectors have yielded a single element D* > 8 x 1011 cm Hz 1/2 /W with an average D* - 5.4 x 1011 cm Hz 1/2 /W over the 20-element array. Data is presented showing the operational characteristics of the 20-element linear imager under various conditions of electrical and optical inputs in both a multiplexed and a time delay and integration (TDI) mode. Plans for a monolithic InSb 100-element linear imager and a 20 x 16 TDI linear imager are discussed.

Paper Details

Date Published: 12 December 1979
PDF: 6 pages
Proc. SPIE 0203, Recent Advances in TV Sensors and Systems, (12 December 1979); doi: 10.1117/12.958139
Show Author Affiliations
W. E. Miller, NASA-Langley Research Center (United States)
H. D. Hendricks, NASA-Langley Research Center (United States)
R. D. Thom, Santa Barbara Research Center (United States)

Published in SPIE Proceedings Vol. 0203:
Recent Advances in TV Sensors and Systems
Charles Freeman, Editor(s)

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