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Proceedings Paper

Performance Characteristics Of Diffused Junction Silicon Photodiodes
Author(s): L. D. Major Jr.; R. W. Olmsted; R. R. Kusner
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Paper Abstract

Two of the basic types of diffused junction silicon photodiodes are the n/p diode (which can be operated in either a partially-depleted or fully-depleted mode) and the p/n diode (which is usually operated in the unbiased mode). These two types of diodes are illustrated in Figure 1. While both diodes convert incident photons to electrical current by the same process they exhibit entirely different operating and performance characteristics which determine their suitability for particular applications. Several of these characteristics are reviewed below.

Paper Details

Date Published: 13 November 1980
PDF: 5 pages
Proc. SPIE 0190, Los Alamos Conference on Optics 1979, (13 November 1980); doi: 10.1117/12.957771
Show Author Affiliations
L. D. Major Jr., The Harshaw Chemical Company (United States)
R. W. Olmsted, The Harshaw Chemical Company (United States)
R. R. Kusner, The Harshaw Chemical Company (United States)

Published in SPIE Proceedings Vol. 0190:
Los Alamos Conference on Optics 1979
Donald H. Liebenberg, Editor(s)

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