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Proceedings Paper

Positive Photoresists As Ion Implantation Masks
Author(s): David J. Elliott
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Paper Abstract

The use of positive photoresists as ion implantation masks is considered in terms of processing advantage and specific applications. the relevant physical and functional properties are discussed with particular emphasis on thermal flow. Following the postbake study, ion implantation parameters are given, focusing on energy and dose ranges that facilitate complete and trouble-free resist removal. The use of new varian-extrion waycool stage for water cooling figure heavily here. Finally, the use of new positive photoresists for ion implantation mask in the future is reviewed.

Paper Details

Date Published: 17 July 1979
PDF: 20 pages
Proc. SPIE 0174, Developments in Semiconductor Microlithography IV, (17 July 1979); doi: 10.1117/12.957191
Show Author Affiliations
David J. Elliott, Shipley Company Inc. (United States)

Published in SPIE Proceedings Vol. 0174:
Developments in Semiconductor Microlithography IV
James W. Dey, Editor(s)

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