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Proceedings Paper

Electron Beam Lithography For Maskmaking
Author(s): Kenneth Wishnuff
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Paper Abstract

At this point in time, some thirteen companle-73 have manufacturing electron beam exposure systems. In view of that fact, I feel it is time that the current practical realities of e-beam be presented to the rest of the industry. It is the purpose of this talk to present those realities and make some projections for the future. Capabilities for defect density, critical dimension uniformity, overlay registration and other mask related parameters will be discussed and quantified. Manufacturing considerations from design to the finished mask will be examined.

Paper Details

Date Published: 17 July 1979
PDF: 6 pages
Proc. SPIE 0174, Developments in Semiconductor Microlithography IV, (17 July 1979); doi: 10.1117/12.957182
Show Author Affiliations
Kenneth Wishnuff, National Semiconductor (United States)

Published in SPIE Proceedings Vol. 0174:
Developments in Semiconductor Microlithography IV
James W. Dey, Editor(s)

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