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Proceedings Paper

Proximity Effect Correction In Vector-Scan Electron-Beam Lithography
Author(s): Carole I . Youngman; Norman D. Wittels
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Paper Abstract

The proximity effect in electron-beam lithography describes enhanced resist exposure due to electron scattering in the resist and backscattering from the substrate. Since good edge definition requires high resist contrast, the proximity effect can substantially alter developed pattern shapes and fidelities. This effect increases as pattern sizes decrease and becomes rather severe for submicrometer geometries. We have explored methods of compensating for the proximity effect in submicrometer patterns exposed on a vector-scan exposure system. This paper discusses two approaches which can be utilized to process figure specifications prior to exposure time to compensate for the proximity effect. We also show how these approaches fit into an overall program of pattern specification and exposure.

Paper Details

Date Published: 6 September 1978
PDF: 5 pages
Proc. SPIE 0135, Developments in Semiconductor Microlithography III, (6 September 1978); doi: 10.1117/12.956113
Show Author Affiliations
Carole I . Youngman, Sperry Research Center (United States)
Norman D. Wittels, Sperry Research Center (United States)

Published in SPIE Proceedings Vol. 0135:
Developments in Semiconductor Microlithography III
Dino R. Ciarlo; James W. Dey; Ken Hoeppner, Editor(s)

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