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Proceedings Paper

Quaternary Alloy Infrared Heterojunction Detectors
Author(s): A. R. Clawson; W. Y. Lum; H. H. Wieder
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Paper Abstract

Single heterojunction photodiodes suitable for the 1.0 to 1.3 µm spectral region of interest for fiber optics communication have been prepared from lattice-matched p-type epilayers of the quaternary III--V alloy semiconductor InGaAsP on n-type InP substrates. The characteristics of these heterojunctions are demonstrated by mesa photodiodes made from Zn-doped epilayers of composition In0.84Ga0.16As0.34P0.66 on Sn-doped InP. Their room temperature spectral response extends from the q, 0.96 µm self-filtering cutoff of the InP substrate to Ëœ 1.13 µm determined by the bandgap of this particular quaternary composition. Responsivities of 0.46 A/W and external quantum efficiencies of 0.54 are measured at 1.05 µm.

Paper Details

Date Published: 6 June 1978
PDF: 8 pages
Proc. SPIE 0132, Utilization of Infrared Detectors, (6 June 1978); doi: 10.1117/12.956051
Show Author Affiliations
A. R. Clawson, Naval Ocean Systems Center (United States)
W. Y. Lum, Naval Ocean Systems Center (United States)
H. H. Wieder, Naval Ocean Systems Center (United States)

Published in SPIE Proceedings Vol. 0132:
Utilization of Infrared Detectors
Irving J. Spiro, Editor(s)

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