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Proceedings Paper

Increasing The Functional Speed Of Positive Photoresist
Author(s): David J. ElIiott
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Paper Abstract

A method for increasing the functional speed of positive photoresist is discussed. Optical linewidth measurement and SEM analysis are used to illustrate the effects of photoresist thickness, exposure time and developer concentration on photomask image reproduction. Finally, photoresist is related to other process parameters, including mask geometry reproduction, and a method for balancing these factors is suggested.

Paper Details

Date Published: 8 August 1977
PDF: 9 pages
Proc. SPIE 0100, Developments in Semiconductor Microlithography II, (8 August 1977); doi: 10.1117/12.955352
Show Author Affiliations
David J. ElIiott, Shipley Company Inc. (United States)

Published in SPIE Proceedings Vol. 0100:
Developments in Semiconductor Microlithography II
James W. Giffin, Editor(s)

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