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Proceedings Paper

Comparison Of Linewidth Measurements On An Sem/Interferometer System And An Optical Linewidth-Measuring Microscope
Author(s): John M. Jerke; Arie W. Hartman; Diana Nyyssonen; Richard E. Swing; Russell D. Young; William J. Keery
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Paper Abstract

In the current linewidth-measurement program at the National Bureau of Standards, the primary measurement of micrometer-wide lines on black-chromium artifacts is made with an interferometer located in a scanning electron microscope (SEM). The data output consists of a line-image profile from the electron detector and a fringe pattern from the interferometer. A correlation between edge location and fringe location is made for both line edges to give the linewidth in units of the wavelength of a He-Ne laser. A model has been developed to describe the interaction of the electrons with the material line and thereby relate a threshold value on the SEM image profile to a selected point on the material line. An optical linewidth-measuring microscope is used to transfer the primary measurements to secondary measurement artifacts; these artifacts will be used to transfer the linewidth measurements to the integrated-circuit industry. Linewidth measurements from the SEM/interferometer system and the optical linewidth-measuring microscope are compared, and the level of measurement uncertainty for each system is discussed.

Paper Details

Date Published: 8 August 1977
PDF: 11 pages
Proc. SPIE 0100, Developments in Semiconductor Microlithography II, (8 August 1977); doi: 10.1117/12.955351
Show Author Affiliations
John M. Jerke, National Bureau of Standards (United States)
Arie W. Hartman, National Bureau of Standards (United States)
Diana Nyyssonen, National Bureau of Standards (United States)
Richard E. Swing, National Bureau of Standards (United States)
Russell D. Young, National Bureau of Standards (United States)
William J. Keery, National Bureau of Standards (United States)

Published in SPIE Proceedings Vol. 0100:
Developments in Semiconductor Microlithography II
James W. Giffin, Editor(s)

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